SURFACE LIFETIME DEGRADATION IN SI AND GE UNDER LOW ENERGY ELECTRON IRRADIATIONFIEBIGER JR; MULLER RS.1973; SURF. SCI.; NETHERL.; DA. 1973; VOL. 36; NO 2; PP. 544-557; BIBL. 34 REF.Serial Issue

STUDIES OF LOCALIZED CHARGE INJECTION IN SURFACE AVALANCHED PN JUNCTIONS.AMANTEA R; MULLER RS.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 205-210; BIBL. 13 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

ANALYTICAL TECHNIQUE FOR THE DESIGN OF DMOS TRANSISTORS.MASUHARA T; MULLER RS.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 173-178; BIBL. 11 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

THEORETICAL TRANSDUCER PROPERTIES OF PIEZOELECTRIC INSULATOR FET TRANSDUCERS. = PROPRIETES TRANSDUCTRICES THEORIQUES DES TRANSDUCTEURS A TRANSISTORS A EFFET DE CHAMP AVEC ISOLANT A PIEZOELECTRIQUEGREENEICH EW; MULLER RS.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 11; PP. 4631-4640; BIBL. 17 REF.Article

VELOCITY OF SURFACE CARRIERS IN INVERSION LAYERS ON SILICONCOEN RW; MULLER RS.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 1; PP. 35-40; BIBL. 10 REF.Article

PIEZOELECTRIC DMOS STRAIN TRANSDUCERS.YEH KW; MULLER RS.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 9; PP. 521-522; BIBL. 8 REF.Article

A NEW ZNO-ON-SI CONVOLVER STRUCTURECOMER AE; MULLER RS.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 5; PP. 118-120; BIBL. 8 REF.Article

COMPLEMENTARY DMOS PROCESS FOR LSI.MASUHARA T; MULLER RS.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 543-546; BIBL. 4 REF.Conference Paper

MINIATURE CANTILEVER BEAMS FABRICATED BY ANISOTROPIC ETCHING OF SILICONJOLLY RD; MULLER RS.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 12; PP. 2750-2754; BIBL. 9 REF.Article

CONDUCTION PROPERTIES OF LIGHTLY DOPES, POLYCRISTALLINE SILICONKORSH GJ; MULLER RS.1978; SOLID-STATE ELECTRON; GBR; DA. 1978; VOL. 21; NO 8; PP. 1045-1051; BIBL. 10 REF.Article

COMPLEMENTARY DMOS PROCESS FOR LSI.MASUHARA T; MULLER RS.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 4; PP. 453-458; BIBL. 3 REF.Article

ALUMINUM OXIDE FILMS MADE FROM EVAPORATED SAPPHIREGOSNEY WM; MULLER RS.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 14; NO 2; PP. 255-266; BIBL. 20 REF.Serial Issue

DETECTION OF ACOUSTIC WAVES WITH A PI-DMOS TRANSDUCER.YEH KW; MULLER RS; KWAN SH et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 517-521; BIBL. 7 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

A SIMPLIFIED MODEL OF SHORT-CHANNEL MOSFET: CARACTERISTICS IN THE BREAKDOWN MODEFU CHIEH HSU; MULLER RS; CHENMING HU et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 571-576; BIBL. 9 REF.Article

CORRELATION BETWEEN SUBSTRATE AND GATE CURRENTS IN MOSFET'SSIMON TAM; PING KEUNG KO; CHENMING HU et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1740-1744; BIBL. 16 REF.Article

HOT-ELECTRON INDUCED EXCESS CARRIERS IN MOSFET'STAM S; HSU FC; KO PK et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 376-378; BIBL. 9 REF.Article

A NEW NMOS TEMPERATURE-STABLE VOLTAGE REFERENCEBLAUSCHILD RA; TUCCI PA; MULLER RS et al.1978; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 6; PP. 767-774; BIBL. 8 REF.Article

DUAL-GATE DEPLETION-MODE DMOS TRANSISTOR FOR LINEAR GAIN-CONTROL APPLICATIONKWAN SH; CHUANG CT; MULLER RS et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 7; PP. 1053-1058; BIBL. 9 REF.Article

INTEGRATED SILICON MICROBEAM PI-FET ACCELEROMETERCHEN PL; MULLER RS; JOLLY RD et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 1; PP. 27-33; BIBL. 11 REF.Article

AN ANALYTICAL BREADOWN MODEL FOR SHORT-CHANNEL MOSFET'SFU CHIEH HSU; PING KEUNG KO; SIMON TAM et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1735-1740; BIBL. 8 REF.Article